N-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC Infineon IRF8707TRPBF

RS stock no.:: 165-8214
Mfr. Part No.:: IRF8707TRPBF
Manufacturer:: Infineon

N-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC Infineon IRF8707TRPBF

Image representative of range

Subtotal (1 reel of 4000 units)**

R 13 888 00

(exc. VAT)

R 15 972 00

(inc. VAT)

8000 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Reel**
4000 +	R 3,472	R 13 888,00

**price indicative

RS stock no.:: 165-8214
Mfr. Part No.:: IRF8707TRPBF
Manufacturer:: Infineon

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF8707TRPBF

This MOSFET is tailored for power applications, enhancing efficiency and thermal performance. Its low on-resistance and minimal gate charge significantly reduce both conduction and switching losses, making it well-suited for high-efficiency DC-DC converters across various applications. The compact SOIC package increases versatility and integrates easily into confined spaces.

Features & Benefits

• Low gate charge diminishes switching losses in applications
• Maximum continuous drain current of 11A boosts performance
• High temperature tolerance up to +150°C ensures reliability
• Low Rds(on) enhances overall power efficiency
• N-channel configuration allows flexible designs
• Fully characterised for avalanche voltage and current provides added security

Applications

• Control of MOSFETs in synchronous buck converters
• Use in isolated DC-DC converters for networking systems
• Power management solutions for notebook processors
• Implementation in automation and control systems for improved performance

What is the suitability for high-temperature environments?

The device operates effectively at temperatures up to +150°C, ensuring reliability in high-heat conditions typical of power applications.

How does this product manage power dissipation?

With a maximum power dissipation of 2.5W, it balances thermal performance, decreasing the risk of overheating.

Can it handle different voltage ratings?

Yes, it can withstand a maximum drain-source voltage of 30V, making it versatile for various applications.

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 2.35V, ensuring compatibility with a range of drive circuits.

How does the low Rds(on) impact its performance?

The low drain-source on-resistance minimises conduction losses, enhancing efficiency and reducing heat generation during operation.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11 A
Maximum Drain Source Voltage	30 V
Series	HEXFET
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	17.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.35V
Minimum Gate Threshold Voltage	1.35V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	5mm
Width	4mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	6.2 nC @ 4.5 V
Transistor Material	Si
Height	1.5mm
Forward Diode Voltage	1V
Minimum Operating Temperature	-55 °C