MPN

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 200 mA, 60 V Enhancement, 6-Pin SC-88 DMN65D8LDW-7

RS stock no.:: 822-2602
Mfr. Part No.:: DMN65D8LDW-7
Manufacturer:: DiodesZetex

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 200 mA, 60 V Enhancement, 6-Pin SC-88 DMN65D8LDW-7

Image representative of range

Bulk discount available

Subtotal (1 pack of 100 units)*

R 135,90

(exc. VAT)

R 156,30

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 82,700 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
100 - 400	R 1.359	R 135.90
500 - 900	R 1.325	R 132.50
1000 - 1400	R 1.285	R 128.50
1500 - 2900	R 1.234	R 123.40
3000 +	R 1.184	R 118.40

*price indicative

RS stock no.:: 822-2602
Mfr. Part No.:: DMN65D8LDW-7
Manufacturer:: DiodesZetex

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	200mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SC-88
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	8Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	150°C
	Typical Gate Charge Qg @ Vgs	0.43nC
	Maximum Power Dissipation Pd	400mW
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.8V
	Transistor Configuration	Isolated
	Maximum Operating Temperature	-55°C
	Height	1mm
	Length	2.2mm
	Standards/Approvals	RoHS, UL 94V-0, MIL-STD-202, AEC-Q101, J-STD-020
	Width	1.35 mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101, AEC-Q200, AEC-Q100

	Select all
	Brand DiodesZetex
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 200mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SC-88
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 8Ω
	Channel Mode Enhancement
	Minimum Operating Temperature 150°C
	Typical Gate Charge Qg @ Vgs 0.43nC
	Maximum Power Dissipation Pd 400mW
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.8V
	Transistor Configuration Isolated
	Maximum Operating Temperature -55°C
	Height 1mm
	Length 2.2mm
	Standards/Approvals RoHS, UL 94V-0, MIL-STD-202, AEC-Q101, J-STD-020
	Width 1.35 mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 200 mA, 60 V Enhancement, 6-Pin SC-88 DMN65D8LDW-7

FREE delivery for orders over R 1,500.00

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Related links