Infineon Isolated OptiMOS 2 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-88
- RS stock no.:
- 827-0002
- Mfr. Part No.:
- 2N7002DWH6327XTSA1
- Manufacturer:
- Infineon
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Subtotal (1 reel of 500 units)*
R 317,50
(exc. VAT)
R 365,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 15,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 500 - 1000 | R 0.635 | R 317.50 |
| 1500 - 2500 | R 0.62 | R 310.00 |
| 3000 - 5500 | R 0.601 | R 300.50 |
| 6000 + | R 0.577 | R 288.50 |
*price indicative
- RS stock no.:
- 827-0002
- Mfr. Part No.:
- 2N7002DWH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.4nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Forward Voltage Vf | 0.96V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Width | 1.25 mm | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.4nC | ||
Maximum Power Dissipation Pd 500mW | ||
Forward Voltage Vf 0.96V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Width 1.25 mm | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Length 2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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