Infineon OptiMOS 3 Type N-Channel MOSFET, 25 A, 250 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

R 26 880,00

(exc. VAT)

R 30 910,00

(inc. VAT)

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Units
Per unit
Per Reel*
1000 +R 26.88R 26,880.00

*price indicative

RS stock no.:
124-8755
Mfr. Part No.:
IPB600N25N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

250V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

22nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

136W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Length

10.31mm

Standards/Approvals

No

Width

9.45 mm

Height

4.57mm

Automotive Standard

No

COO (Country of Origin):
CN

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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