Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA1
- RS stock no.:
- 826-9092
- Mfr. Part No.:
- IPB120P04P4L03ATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 484,09
(exc. VAT)
R 556,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 3,770 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 48.409 | R 484.09 |
| 100 - 240 | R 47.199 | R 471.99 |
| 250 - 490 | R 45.783 | R 457.83 |
| 500 - 990 | R 43.952 | R 439.52 |
| 1000 + | R 42.194 | R 421.94 |
*price indicative
- RS stock no.:
- 826-9092
- Mfr. Part No.:
- IPB120P04P4L03ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | OptiMOS P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 136W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10mm | |
| Standards/Approvals | RoHS | |
| Height | 4.4mm | |
| Automotive Standard | AEC-Q | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series OptiMOS P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 136W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10mm | ||
Standards/Approvals RoHS | ||
Height 4.4mm | ||
Automotive Standard AEC-Q | ||
Not Applicable
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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- Infineon OptiMOS P Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-263