Infineon OptiMOS P Type P-Channel Power Transistor, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA1
- RS stock no.:
- 753-3033
- Mfr. Part No.:
- IPD90P03P4L04ATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 153,03
(exc. VAT)
R 175,985
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 5 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 120 | R 30.606 | R 153.03 |
| 125 - 495 | R 29.84 | R 149.20 |
| 500 - 2495 | R 28.944 | R 144.72 |
| 2500 - 12495 | R 27.786 | R 138.93 |
| 12500 + | R 26.674 | R 133.37 |
*price indicative
- RS stock no.:
- 753-3033
- Mfr. Part No.:
- IPD90P03P4L04ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | OptiMOS P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 137W | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 2.3mm | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series OptiMOS P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 137W | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 2.3mm | ||
Length 6.5mm | ||
Automotive Standard AEC-Q | ||
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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