Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF
- RS stock no.:
- 826-8901
- Mfr. Part No.:
- IRF7342TRPBF
- Manufacturer:
- Infineon
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View bulk pricing optionSubtotal (1 pack of 10 units)*
R 179,76
(exc. VAT)
R 206,72
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 80 unit(s) ready to ship from another location
- Plus 1,060 unit(s) shipping from 09 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 17.976 | R 179.76 |
| 100 - 490 | R 17.527 | R 175.27 |
| 500 - 1990 | R 17.001 | R 170.01 |
| 2000 - 3990 | R 16.321 | R 163.21 |
| 4000 + | R 15.668 | R 156.68 |
*price indicative
- RS stock no.:
- 826-8901
- Mfr. Part No.:
- IRF7342TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 3.4A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7342TRPBF
This power MOSFET is intended for efficient power management in various electronic devices. Featuring a P-channel configuration, it is suitable for high-performance switching and amplification operations. Its robust specifications meet the essential requirements of engineers and designers in the automation and electrical sectors.
Features & Benefits
• Maximum continuous drain current of 3.4A
• Drain-source voltage tolerance of up to 55V
• Surface mount design allows for straightforward installations
• Low maximum drain-source resistance improves energy efficiency
• Gate threshold voltage of 1 V promotes dependable switching
Applications
• Power management circuits for improved energy utilisation
• Automation equipment requiring robust switching capabilities
• Suitable for motor control systems
• Used in power converters for electronics
• Common in battery management systems
What are the thermal limits for operation?
It operates effectively within a temperature range of -55°C to +150°C, ensuring reliability in various environments.
How does this component enhance circuit efficiency?
The low Rds(on) Value reduces power loss during operation, thereby enhancing overall circuit efficiency.
Can this MOSFET handle pulsed currents?
Yes, it can accommodate pulsed drain currents of up to 27A, suitable for transient conditions.
What type of packaging is it available in?
It is available in an SO-8 surface mount package, optimising layout flexibility and manufacturing processes.
Is there a specific gate voltage for optimal performance?
The gate-to-source voltage should ideally be maintained at ±20V for optimal performance and longevity of the device.
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