Dual P-Channel MOSFET, 3.4 A, 55 V, 8-Pin SOIC Infineon IRF7342TRPBF

RS stock no.:: 826-8901
Mfr. Part No.:: IRF7342TRPBF
Manufacturer:: Infineon

Dual P-Channel MOSFET, 3.4 A, 55 V, 8-Pin SOIC Infineon IRF7342TRPBF

Bulk discount available

Subtotal (1 pack of 10 units)**

R 189 95

(exc. VAT)

R 218 44

(inc. VAT)

50 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Pack**
10 - 90	R 18,995	R 189,95
100 - 490	R 18,52	R 185,20
500 - 1990	R 17,964	R 179,64
2000 - 3990	R 17,245	R 172,45
4000 +	R 16,555	R 165,55

**price indicative

RS stock no.:: 826-8901
Mfr. Part No.:: IRF7342TRPBF
Manufacturer:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 3.4A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7342TRPBF

This power MOSFET is intended for efficient power management in various electronic devices. Featuring a P-channel configuration, it is suitable for high-performance switching and amplification operations. Its robust specifications meet the essential requirements of engineers and designers in the automation and electrical sectors.

Features & Benefits

• Maximum continuous drain current of 3.4A
• Drain-source voltage tolerance of up to 55V
• Surface mount design allows for straightforward installations
• Low maximum drain-source resistance improves energy efficiency
• Gate threshold voltage of 1 V promotes dependable switching

Applications

• Power management circuits for improved energy utilisation
• Automation equipment requiring robust switching capabilities
• Suitable for motor control systems
• Used in power converters for electronics
• Common in battery management systems

What are the thermal limits for operation?

It operates effectively within a temperature range of -55°C to +150°C, ensuring reliability in various environments.

How does this component enhance circuit efficiency?

The low Rds(on) value reduces power loss during operation, thereby enhancing overall circuit efficiency.

Can this MOSFET handle pulsed currents?

Yes, it can accommodate pulsed drain currents of up to 27A, suitable for transient conditions.

What type of packaging is it available in?

It is available in an SO-8 surface mount package, optimising layout flexibility and manufacturing processes.

Is there a specific gate voltage for optimal performance?

The gate-to-source voltage should ideally be maintained at ±20V for optimal performance and longevity of the device.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Manufacturer	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	3.4 A
	Maximum Drain Source Voltage	55 V
	Package Type	SOIC
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	170 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4mm
	Number of Elements per Chip	2
	Transistor Material	Si
	Length	5mm
	Typical Gate Charge @ Vgs	26 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C
	Height	1.5mm

	Select all
	Manufacturer Infineon
	Channel Type P
	Maximum Continuous Drain Current 3.4 A
	Maximum Drain Source Voltage 55 V
	Package Type SOIC
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 170 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4mm
	Number of Elements per Chip 2
	Transistor Material Si
	Length 5mm
	Typical Gate Charge @ Vgs 26 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C
	Height 1.5mm