Dual N/P-Channel-Channel MOSFET, 3 A, 4 A, 30 V, 8-Pin SOIC Infineon IRF7309TRPBF

RS stock no.:: 826-8866
Mfr. Part No.:: IRF7309TRPBF
Manufacturer:: Infineon

Dual N/P-Channel-Channel MOSFET, 3 A, 4 A, 30 V, 8-Pin SOIC Infineon IRF7309TRPBF

Image representative of range

2240 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (In a Pack of 20)

R 13,068

(exc. VAT)

R 15,028

(inc. VAT)

Units	Per unit	Per Pack*
20 - 80	R 13,068	R 261,36
100 - 480	R 12,741	R 254,82
500 - 1980	R 12,359	R 247,18
2000 - 3980	R 11,865	R 237,30
4000 +	R 11,39	R 227,80

*price indicative

RS stock no.:: 826-8866
Mfr. Part No.:: IRF7309TRPBF
Manufacturer:: Infineon

IRF7309TRPBF HEXFET Power MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	3 A, 4 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	80 mΩ, 160 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.4 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	4mm
Typical Gate Charge @ Vgs	25 nC @ 4.5 V
Length	5mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Height	1.5mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 3 A, 4 A, 30 V, 8-Pin SOIC Infineon IRF7309TRPBF

Dual N/P-Channel Power MOSFET, Infineon