Dual N/P-Channel-Channel MOSFET, 5.3 A, 6.6 A, 20 V, 8-Pin SOIC Infineon IRF7317TRPBF

RS stock no.:: 826-8875
Mfr. Part No.:: IRF7317TRPBF
Manufacturer:: Infineon

Dual N/P-Channel-Channel MOSFET, 5.3 A, 6.6 A, 20 V, 8-Pin SOIC Infineon IRF7317TRPBF

Image representative of range

Bulk discount available

Price (Excl VAT) Each (In a Pack of 20)

R 15,167

(exc. VAT)

R 17,442

(inc. VAT)

40 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Pack**
20 - 80	R 15,167	R 303,34
100 - 480	R 14,788	R 295,76
500 - 1980	R 14,345	R 286,90
2000 - 3980	R 13,771	R 275,42
4000 +	R 13,22	R 264,40

**price indicative

RS stock no.:: 826-8875
Mfr. Part No.:: IRF7317TRPBF
Manufacturer:: Infineon

IRF7317TRPBF HEXFET Power MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	5.3 A, 6.6 A
Maximum Drain Source Voltage	20 V
Series	HEXFET
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	46 mΩ, 98 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	0.7V
Minimum Gate Threshold Voltage	0.7V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Width	4mm
Number of Elements per Chip	2
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	5mm
Typical Gate Charge @ Vgs	18 nC @ 4.5 V, 19 nC @ 4.5 V
Height	1.5mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 5.3 A, 6.6 A, 20 V, 8-Pin SOIC Infineon IRF7317TRPBF

Dual N/P-Channel Power MOSFET, Infineon

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