Infineon HEXFET Dual N-Channel MOSFET, 9.7 A, 30 V, 8-Pin SOIC IRF8313TRPBF
- RS stock no.:
- 165-5961
- Mfr. Part No.:
- IRF8313TRPBF
- Manufacturer:
- Infineon
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- RS stock no.:
- 165-5961
- Mfr. Part No.:
- IRF8313TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.7 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 21.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 6 nC @ 4.5 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Width | 4mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.7 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 21.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 6 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Width 4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
- COO (Country of Origin):
- TH
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