Name: Infineon HEXFET Dual N-Channel MOSFET, 9.7 A, 30 V, 8-Pin SOIC IRF8313TRPBF
Brand: Infineon
SKU: 165-5961
Price: 7.25 ZAR
Availability: OutOfStock

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	9.7 A
	Maximum Drain Source Voltage	30 V
	Package Type	SOIC
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	21.6 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.35V
	Minimum Gate Threshold Voltage	1.35V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	2
	Typical Gate Charge @ Vgs	6 nC @ 4.5 V
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Width	4mm
	Length	5mm
	Height	1.5mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 9.7 A
	Maximum Drain Source Voltage 30 V
	Package Type SOIC
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 21.6 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.35V
	Minimum Gate Threshold Voltage 1.35V
	Maximum Power Dissipation 2 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 2
	Typical Gate Charge @ Vgs 6 nC @ 4.5 V
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Width 4mm
	Length 5mm
	Height 1.5mm
	Minimum Operating Temperature -55 °C

COO (Country of Origin):: TH

Infineon HEXFET Dual N-Channel MOSFET, 9.7 A, 30 V, 8-Pin SOIC IRF8313TRPBF

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