N-Channel MOSFET, 100 A, 100 V, 3-Pin D2PAK Infineon IPB100N10S305ATMA1

RS stock no.:: 823-5649
Mfr. Part No.:: IPB100N10S305ATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 100 A, 100 V, 3-Pin D2PAK Infineon IPB100N10S305ATMA1

Price (Excl VAT) Each (In a Pack of 2)

R 62,185

(exc. VAT)

R 71,513

(inc. VAT)

999999 Available in South Africa for same day despatch or collection. Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

999999 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Units	Per unit	Per Pack**
2 +	R 62,185	R 124,37

**price indicative

RS stock no.:: 823-5649
Mfr. Part No.:: IPB100N10S305ATMA1
Manufacturer:: Infineon

IPB100N10S3-05 OptiMOS®-T Power-Transistor Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	100 V
Series	OptiMOS 3
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	4.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	135 nC @ 10 V
Width	9.25mm
Length	10mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Height	4.4mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 100 A, 100 V, 3-Pin D2PAK Infineon IPB100N10S305ATMA1

FREE delivery for orders over R 1500

Infineon OptiMOS™3 Power MOSFETs, 100V and over

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