Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263 IPB027N10N3GATMA1

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Subtotal (1 pack of 2 units)*

R 103,92

(exc. VAT)

R 119,50

(inc. VAT)

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  • 2,294 unit(s) shipping from 08 June 2026
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Units
Per unit
Per Pack*
2 - 98R 51.96R 103.92
100 - 248R 50.66R 101.32
250 - 498R 49.14R 98.28
500 - 998R 47.175R 94.35
1000 +R 45.29R 90.58

*price indicative

Packaging Options:
RS stock no.:
825-9235
Mfr. Part No.:
IPB027N10N3GATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

300W

Typical Gate Charge Qg @ Vgs

155nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10.31mm

Height

4.57mm

Standards/Approvals

No

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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