DiodesZetex DMN65D8L Type N-Channel MOSFET, 310 mA, 60 V Enhancement, 3-Pin SOT-23 DMN65D8L-7
- RS stock no.:
- 823-2952
- Mfr. Part No.:
- DMN65D8L-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 200 units)*
R 99,20
(exc. VAT)
R 114,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,000 unit(s) ready to ship from another location
- Plus 273,400 unit(s) shipping from 18 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 200 - 800 | R 0.496 | R 99.20 |
| 1000 - 1800 | R 0.484 | R 96.80 |
| 2000 - 2800 | R 0.469 | R 93.80 |
| 3000 - 5800 | R 0.45 | R 90.00 |
| 6000 + | R 0.432 | R 86.40 |
*price indicative
- RS stock no.:
- 823-2952
- Mfr. Part No.:
- DMN65D8L-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 310mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | DMN65D8L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 540mW | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 0.87nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 310mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series DMN65D8L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 540mW | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 0.87nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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