DiodesZetex Isolated 2 Type N-Channel MOSFET, 1.38 A, 20 V Enhancement, 6-Pin SOT-563 DMG1024UV-7
- RS stock no.:
- 822-2510
- Mfr. Part No.:
- DMG1024UV-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
R 183,10
(exc. VAT)
R 210,55
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 600 unit(s) shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | R 3.662 | R 183.10 |
| 250 - 700 | R 3.571 | R 178.55 |
| 750 - 1450 | R 3.463 | R 173.15 |
| 1500 - 2950 | R 3.325 | R 166.25 |
| 3000 + | R 3.192 | R 159.60 |
*price indicative
- RS stock no.:
- 822-2510
- Mfr. Part No.:
- DMG1024UV-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.38A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 530mW | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 736.6nC | |
| Minimum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, J-STD-020 | |
| Height | 0.6mm | |
| Length | 1.7mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.38A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 530mW | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 736.6nC | ||
Minimum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, J-STD-020 | ||
Height 0.6mm | ||
Length 1.7mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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