onsemi Isolated 2 Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 6-Pin SOT-563 2N7002V
- RS stock no.:
- 805-1141
- Mfr. Part No.:
- 2N7002V
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 tape of 50 units)*
R 97,95
(exc. VAT)
R 112,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 3,450 unit(s), ready to ship from another location
Units | Per unit | Per Tape* |
|---|---|---|
| 50 - 200 | R 1.959 | R 97.95 |
| 250 - 450 | R 1.91 | R 95.50 |
| 500 - 2450 | R 1.853 | R 92.65 |
| 2500 - 4950 | R 1.779 | R 88.95 |
| 5000 + | R 1.707 | R 85.35 |
*price indicative
- RS stock no.:
- 805-1141
- Mfr. Part No.:
- 2N7002V
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 13.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 250mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Width | 1.2 mm | |
| Length | 1.7mm | |
| Height | 0.6mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 13.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 250mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Width 1.2 mm | ||
Length 1.7mm | ||
Height 0.6mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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