Vishay SUM65N20-30 Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-263 SUM65N20-30-E3
- RS stock no.:
- 818-7489
- Mfr. Part No.:
- SUM65N20-30-E3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 103,91
(exc. VAT)
R 119,496
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 666 unit(s) shipping from 09 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 98 | R 51.955 | R 103.91 |
| 100 - 198 | R 50.655 | R 101.31 |
| 200 - 398 | R 49.135 | R 98.27 |
| 400 - 798 | R 47.17 | R 94.34 |
| 800 + | R 45.285 | R 90.57 |
*price indicative
- RS stock no.:
- 818-7489
- Mfr. Part No.:
- SUM65N20-30-E3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | SUM65N20-30 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 84mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65 mm | |
| Height | 4.826mm | |
| Standards/Approvals | No | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series SUM65N20-30 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 84mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Width 9.65 mm | ||
Height 4.826mm | ||
Standards/Approvals No | ||
Length 10.41mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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