Vishay IRFL Type P-Channel MOSFET, 690 mA, 100 V Enhancement, 4-Pin SOT-223 IRFL9110TRPBF
- RS stock no.:
- 815-2730
- Mfr. Part No.:
- IRFL9110TRPBF
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 125,66
(exc. VAT)
R 144,51
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 1,080 unit(s) shipping from 27 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 12.566 | R 125.66 |
| 100 - 490 | R 12.252 | R 122.52 |
| 500 - 1490 | R 11.884 | R 118.84 |
| 1500 - 2490 | R 11.409 | R 114.09 |
| 2500 + | R 10.953 | R 109.53 |
*price indicative
- RS stock no.:
- 815-2730
- Mfr. Part No.:
- IRFL9110TRPBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 690mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | IRFL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -5.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.8mm | |
| Length | 6.7mm | |
| Width | 3.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 690mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series IRFL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -5.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.8mm | ||
Length 6.7mm | ||
Width 3.7 mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay IRFL Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Vishay IRFL Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Vishay IRFL Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 IRFL9014TRPBF
- Vishay IRFL Type N-Channel MOSFET 200 V Enhancement, 4-Pin SOT-223
- Vishay IRFL Type N-Channel MOSFET 200 V Enhancement, 4-Pin SOT-223 IRFL210TRPBF
- Vishay IRFL Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Vishay IRFL Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Vishay IRFL Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 IRFL014TRPBF