Infineon BSP Type N-Channel MOSFET, 0.68 A, 100 V Enhancement, 3-Pin SOT-223 BSP316PH6327XTSA1
- RS stock no.:
- 250-0536
- Distrelec Article No.:
- 304-40-496
- Mfr. Part No.:
- BSP316PH6327XTSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 43,28
(exc. VAT)
R 49,77
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,920 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 8.656 | R 43.28 |
| 10 - 95 | R 8.44 | R 42.20 |
| 100 - 245 | R 8.186 | R 40.93 |
| 250 - 495 | R 7.858 | R 39.29 |
| 500 + | R 7.544 | R 37.72 |
*price indicative
- RS stock no.:
- 250-0536
- Distrelec Article No.:
- 304-40-496
- Mfr. Part No.:
- BSP316PH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.68A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | BSP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.68A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series BSP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes this SIPMOS, Small-Signal-Transistor P-Channel, Enhancement mode mosfet. The device is dv/dt rated, P-channel, Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.
Vds is 100 V, RDS(on) 1.8 Ω and Id is 0.68 A
Maximum power dissipation is 360 mW
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