Vishay SiHF840S N-Channel MOSFET, 8.1 A, 500 V Enhancement, 3-Pin TO-263 SIHF840STRL-GE3
- RS stock no.:
- 815-2657
- Mfr. Part No.:
- SIHF840STRL-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 415,43
(exc. VAT)
R 477,74
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 10 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 41.543 | R 415.43 |
| 100 - 190 | R 40.504 | R 405.04 |
| 200 - 390 | R 39.289 | R 392.89 |
| 400 - 790 | R 37.717 | R 377.17 |
| 800 + | R 36.208 | R 362.08 |
*price indicative
- RS stock no.:
- 815-2657
- Mfr. Part No.:
- SIHF840STRL-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 8.1A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-263 | |
| Series | SiHF840S | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 9.65mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 8.1A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-263 | ||
Series SiHF840S | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 9.65mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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