Vishay Si4435DDY Type P-Channel MOSFET, 8.1 A, 30 V Enhancement, 8-Pin SOIC
- RS stock no.:
- 919-0288
- Mfr. Part No.:
- SI4435DDY-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 reel of 2500 units)*
R 13 152,50
(exc. VAT)
R 15 125,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 12 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 5.261 | R 13,152.50 |
| 5000 - 5000 | R 5.13 | R 12,825.00 |
| 7500 - 12500 | R 4.976 | R 12,440.00 |
| 15000 - 20000 | R 4.777 | R 11,942.50 |
| 22500 + | R 4.586 | R 11,465.00 |
*price indicative
- RS stock no.:
- 919-0288
- Mfr. Part No.:
- SI4435DDY-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 8.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | Si4435DDY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 8.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series Si4435DDY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4 mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
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