Vishay SiR416DP Type N-Channel MOSFET, 27 A, 40 V Enhancement, 8-Pin SO-8 SIR416DP-T1-GE3

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

R 216,77

(exc. VAT)

R 249,29

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 290R 21.677R 216.77
300 - 590R 21.135R 211.35
600 - 1490R 20.501R 205.01
1500 - 2990R 19.681R 196.81
3000 +R 18.894R 188.94

*price indicative

Packaging Options:
RS stock no.:
814-1272
Mfr. Part No.:
SIR416DP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

40V

Series

SiR416DP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.2mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.7V

Typical Gate Charge Qg @ Vgs

59nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

69W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.25mm

Height

1.12mm

Width

5.26 mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links