Vishay SiR416DP N-Channel MOSFET, 27 A, 40 V Enhancement, 8-Pin SO-8 SIR416DP-T1-GE3
- RS stock no.:
- 814-1272
- Mfr. Part No.:
- SIR416DP-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 202,52
(exc. VAT)
R 232,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 16 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 290 | R 20.252 | R 202.52 |
| 300 - 590 | R 19.746 | R 197.46 |
| 600 - 1490 | R 19.154 | R 191.54 |
| 1500 - 2990 | R 18.388 | R 183.88 |
| 3000 + | R 17.652 | R 176.52 |
*price indicative
- RS stock no.:
- 814-1272
- Mfr. Part No.:
- SIR416DP-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SiR416DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 69W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.26mm | |
| Standards/Approvals | No | |
| Length | 6.25mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SiR416DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 69W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5.26mm | ||
Standards/Approvals No | ||
Length 6.25mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SiR416DP Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- onsemi NVTFS015N04C Type N-Channel MOSFET 40 V Enhancement, 8-Pin WDFN
- onsemi NVTFS015N04C Type N-Channel MOSFET 40 V Enhancement, 8-Pin WDFN NVTFS015N04CTAG
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN NVMFD5C478NT1G
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212
- ROHM RQ3 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSMT-8 RQ3P270BKFRATCB