Vishay SiR416DP Type N-Channel MOSFET, 27 A, 40 V Enhancement, 8-Pin SO-8 SIR416DP-T1-GE3

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Subtotal (1 pack of 10 units)*

R 210,82

(exc. VAT)

R 242,44

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 290R 21.082R 210.82
300 - 590R 20.555R 205.55
600 - 1490R 19.938R 199.38
1500 - 2990R 19.14R 191.40
3000 +R 18.374R 183.74

*price indicative

Packaging Options:
RS stock no.:
814-1272
Mfr. Part No.:
SIR416DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

SiR416DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

59nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

69W

Forward Voltage Vf

0.7V

Maximum Operating Temperature

150°C

Width

5.26 mm

Standards/Approvals

No

Height

1.12mm

Length

6.25mm

Automotive Standard

No

COO (Country of Origin):
CN

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