Vishay Si4178DY N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3
- RS stock no.:
- 812-3205P
- Mfr. Part No.:
- SI4178DY-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal 100 units (supplied on a continuous strip)*
R 970,70
(exc. VAT)
R 1 116,30
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,680 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 480 | R 9.707 |
| 500 - 1480 | R 9.416 |
| 1500 - 2480 | R 9.039 |
| 2500 + | R 8.678 |
*price indicative
- RS stock no.:
- 812-3205P
- Mfr. Part No.:
- SI4178DY-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | Si4178DY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 5W | |
| Forward Voltage Vf | 0.85V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Standards/Approvals | RoHS | |
| Height | 1.55mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series Si4178DY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 5W | ||
Forward Voltage Vf 0.85V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Standards/Approvals RoHS | ||
Height 1.55mm | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Si4178DY Series MOSFET, 30V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SI4178DY-T1-GE3
This MOSFET is a surface-mount N-channel enhancement device designed for power switching and management in compact electronic systems. It offers moderate voltage handling and high continuous current capability, suited to applications where efficient high-current switching and thermal endurance are required. The component complies with RoHS and is intended for board-level mounting in industry and commercial designs.
Features and Benefits:
• 30V drain rating enables medium-voltage switching applications
• 12A continuous current supports high-current load control
• 33mΩ Rds(on) reduces conduction losses in power paths
• 7.5nC typical gate charge allows fast gate transitions
• 5W power dissipation helps manage thermal load in small packages
• 12A continuous current supports high-current load control
• 33mΩ Rds(on) reduces conduction losses in power paths
• 7.5nC typical gate charge allows fast gate transitions
• 5W power dissipation helps manage thermal load in small packages
Applications
• Suitable for DC-DC converter output stages
• Ideal for battery management and power distribution
• Used with motor drivers for compact actuators
• Can be used for load switching in telecom equipment
• Ideal for battery management and power distribution
• Used with motor drivers for compact actuators
• Can be used for load switching in telecom equipment
What gate voltage limitations must designers observe?
The device accepts up to 25V between gate and source, so gate drivers must remain within this limit to avoid gate-oxide stress.
How does thermal performance influence PCB layout decisions?
With a 5W dissipation rating, designers should provide adequate copper area and thermal vias beneath the SOIC footprint to improve heat-spreading and maintain junction temperature within limits.
What ambient temperature range can it operate within?
It functions reliably from -55°C to 150°C, which informs selection for applications exposed to wide thermal extremes.
What package and mounting considerations affect assembly?
The part is supplied in an SOIC-8 surface-mount package with an overall profile height of 1.55mm, so stencil design and solder-paste volume must be tuned for consistent solder joints.
Related links
- Vishay Si4178DY Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay Si4178DY Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC
- Vishay Si4850EY Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC
- Vishay ThunderFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- Vishay Si4134DY Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- Vishay ThunderFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC