Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3

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Subtotal (1 pack of 20 units)*

R 170,62

(exc. VAT)

R 196,22

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 80R 8.531R 170.62
100 - 480R 8.318R 166.36
500 - 1480R 8.068R 161.36
1500 - 2480R 7.746R 154.92
2500 +R 7.436R 148.72

*price indicative

Packaging Options:
RS stock no.:
812-3205
Mfr. Part No.:
SI4178DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Series

Si4178DY

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

5W

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

7.5nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.85V

Maximum Operating Temperature

150°C

Height

1.55mm

Width

4 mm

Length

5mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


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