Vishay Si2338DS Type N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 Si2338DS-T1-GE3

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Subtotal (1 pack of 20 units)*

R 168,20

(exc. VAT)

R 193,40

(inc. VAT)

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Last RS stock
  • Final 7,600 unit(s), ready to ship from another location

Units
Per unit
Per Pack*
20 - 280R 8.41R 168.20
300 - 580R 8.20R 164.00
600 - 1480R 7.954R 159.08
1500 - 2980R 7.636R 152.72
3000 +R 7.33R 146.60

*price indicative

Packaging Options:
RS stock no.:
812-3126
Mfr. Part No.:
Si2338DS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Series

Si2338DS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.033Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.2nC

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

1.02mm

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Length

3.04mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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