Vishay Si2323DDS Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 3-Pin SOT-23 SI2323DDS-T1-GE3

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Subtotal (1 pack of 20 units)*

R 160,62

(exc. VAT)

R 184,72

(inc. VAT)

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  • 40 unit(s) ready to ship from another location
  • Plus 640 unit(s) shipping from 09 January 2026
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Units
Per unit
Per Pack*
20 - 280R 8.031R 160.62
300 - 580R 7.83R 156.60
600 - 1480R 7.595R 151.90
1500 - 2980R 7.291R 145.82
3000 +R 6.999R 139.98

*price indicative

Packaging Options:
RS stock no.:
812-3110
Mfr. Part No.:
SI2323DDS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.3A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

Si2323DDS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

1.7W

Forward Voltage Vf

-0.79V

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.02mm

Length

3.04mm

Standards/Approvals

No

Width

1.4 mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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