onsemi PowerTrench Type P-Channel MOSFET, 4.5 A, 20 V Enhancement, 6-Pin SOT-23 FDC640P

RS stock no.:: 809-0856
Mfr. Part No.:: FDC640P
Manufacturer:: onsemi

onsemi PowerTrench Type P-Channel MOSFET, 4.5 A, 20 V Enhancement, 6-Pin SOT-23 FDC640P

Image representative of range

Bulk discount available

Subtotal (1 tape of 20 units)*

R 220,34

(exc. VAT)

R 253,40

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

2,980 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tape*
20 - 80	R 11.017	R 220.34
100 - 180	R 10.742	R 214.84
200 - 980	R 10.42	R 208.40
1000 - 1980	R 10.003	R 200.06
2000 +	R 9.603	R 192.06

*price indicative

RS stock no.:: 809-0856
Mfr. Part No.:: FDC640P
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.5A
	Maximum Drain Source Voltage Vds	20V
	Series	PowerTrench
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	9nC
	Maximum Power Dissipation Pd	1.6W
	Maximum Gate Source Voltage Vgs	12 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	3mm
	Width	1.7 mm
	Height	1mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.5A
	Maximum Drain Source Voltage Vds 20V
	Series PowerTrench
	Package Type SOT-23
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 9nC
	Maximum Power Dissipation Pd 1.6W
	Maximum Gate Source Voltage Vgs 12 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 3mm
	Width 1.7 mm
	Height 1mm
	Standards/Approvals No
	Automotive Standard No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi PowerTrench Type P-Channel MOSFET, 4.5 A, 20 V Enhancement, 6-Pin SOT-23 FDC640P

FREE delivery for orders over R 1,500.00

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

Related links