onsemi PowerTrench Type P-Channel MOSFET, 3.6 A, 30 V Enhancement, 6-Pin SOT-23 FDC654P

RS stock no.:: 809-0862
Mfr. Part No.:: FDC654P
Manufacturer:: onsemi

onsemi PowerTrench Type P-Channel MOSFET, 3.6 A, 30 V Enhancement, 6-Pin SOT-23 FDC654P

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Bulk discount available

Subtotal (1 tape of 20 units)*

R 44,94

(exc. VAT)

R 51,68

(inc. VAT)

FREE delivery for orders over R 1,500.00

Last RS stock

Final 4,940 unit(s), ready to ship from another location

Units	Per unit	Per Tape*
20 - 80	R 2.247	R 44.94
100 - 180	R 2.191	R 43.82
200 - 980	R 2.126	R 42.52
1000 - 1980	R 2.041	R 40.82
2000 +	R 1.959	R 39.18

*price indicative

RS stock no.:: 809-0862
Mfr. Part No.:: FDC654P
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	30V
	Series	PowerTrench
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.6W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	6.2nC
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Length	3mm
	Standards/Approvals	No
	Width	1.7 mm
	Height	1mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 30V
	Series PowerTrench
	Package Type SOT-23
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.6W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 6.2nC
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Length 3mm
	Standards/Approvals No
	Width 1.7 mm
	Height 1mm
	Automotive Standard No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi PowerTrench Type P-Channel MOSFET, 3.6 A, 30 V Enhancement, 6-Pin SOT-23 FDC654P

FREE delivery for orders over R 1,500.00

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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