onsemi Isolated PowerTrench 2 N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33
- RS stock no.:
- 806-3504
- Mfr. Part No.:
- FDMC8030
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 172,47
(exc. VAT)
R 198,34
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 1,365 unit(s) shipping from 22 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 34.494 | R 172.47 |
| 25 - 45 | R 33.632 | R 168.16 |
| 50 - 245 | R 32.624 | R 163.12 |
| 250 - 495 | R 31.32 | R 156.60 |
| 500 + | R 30.068 | R 150.34 |
*price indicative
- RS stock no.:
- 806-3504
- Mfr. Part No.:
- FDMC8030
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | Dual N-Channel Power Trench MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | PowerTrench | |
| Package Type | Power 33 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.9W | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | Lead-Free and RoHS | |
| Width | 3mm | |
| Length | 3mm | |
| Height | 0.75mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type Dual N-Channel Power Trench MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series PowerTrench | ||
Package Type Power 33 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.9W | ||
Maximum Gate Source Voltage Vgs 12V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals Lead-Free and RoHS | ||
Width 3mm | ||
Length 3mm | ||
Height 0.75mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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