onsemi Isolated PowerTrench 2 Type N-Channel Power MOSFET, 7 A, 30 V Enhancement, 8-Pin SOIC FDS8984
- RS stock no.:
- 671-0753
- Mfr. Part No.:
- FDS8984
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 65,90
(exc. VAT)
R 75,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,410 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 13.18 | R 65.90 |
| 25 - 95 | R 12.85 | R 64.25 |
| 100 - 245 | R 12.464 | R 62.32 |
| 250 - 495 | R 11.966 | R 59.83 |
| 500 + | R 11.488 | R 57.44 |
*price indicative
- RS stock no.:
- 671-0753
- Mfr. Part No.:
- FDS8984
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Width 4 mm | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Automotive Dual N-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor provides solutions that solve complex challenges in the automotive market with a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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