onsemi Isolated 2 Type N-Channel MOSFET, 16 A, 30 V Enhancement, 8-Pin WDFN FDMC7208S
- RS stock no.:
- 806-3490
- Mfr. Part No.:
- FDMC7208S
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 153,73
(exc. VAT)
R 176,79
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 1,210 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 30.746 | R 153.73 |
| 25 - 45 | R 29.978 | R 149.89 |
| 50 - 245 | R 29.078 | R 145.39 |
| 250 - 495 | R 27.914 | R 139.57 |
| 500 + | R 26.798 | R 133.99 |
*price indicative
- RS stock no.:
- 806-3490
- Mfr. Part No.:
- FDMC7208S
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.9W | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Length | 3mm | |
| Height | 0.75mm | |
| Width | 3 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.9W | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Length 3mm | ||
Height 0.75mm | ||
Width 3 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor
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MOSFET Transistors, ON Semi
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