onsemi NVF6P02 Type P-Channel MOSFET, 8.4 A, 20 V Enhancement, 3-Pin SOT-223 NVF6P02T3G
- RS stock no.:
- 805-1996
- Mfr. Part No.:
- NVF6P02T3G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 10 units)*
R 184,79
(exc. VAT)
R 212,51
(inc. VAT)
FREE delivery for orders over R 1,500.00
Limited stock
- 3,160 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 40 | R 18.479 | R 184.79 |
| 50 - 90 | R 18.017 | R 180.17 |
| 100 - 240 | R 17.476 | R 174.76 |
| 250 - 490 | R 16.777 | R 167.77 |
| 500 + | R 16.106 | R 161.06 |
*price indicative
- RS stock no.:
- 805-1996
- Mfr. Part No.:
- NVF6P02T3G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 8.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | NVF6P02 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 8.3W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -8V, +8V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.65mm | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Width | 3.7mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 8.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series NVF6P02 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 8.3W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -8V, +8V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.65mm | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Width 3.7mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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