P-Channel MOSFET, 8.4 A, 40 V, 3-Pin DPAK onsemi FDD4685
- RS stock no.:
- 809-0893
- Mfr. Part No.:
- FDD4685
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)**
R 222 35
(exc. VAT)
R 255 70
(inc. VAT)
80 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
---|---|---|
10 - 40 | R 22,235 | R 222,35 |
50 - 90 | R 21,679 | R 216,79 |
100 - 490 | R 21,029 | R 210,29 |
500 - 990 | R 20,188 | R 201,88 |
1000 + | R 19,38 | R 193,80 |
**price indicative
- RS stock no.:
- 809-0893
- Mfr. Part No.:
- FDD4685
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 8.4 A | |
Maximum Drain Source Voltage | 40 V | |
Series | PowerTrench | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 42 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 69 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Width | 6.22mm | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 19 nC @ 5 V | |
Length | 6.73mm | |
Minimum Operating Temperature | -55 °C | |
Height | 2.39mm | |
Select all | ||
---|---|---|
Manufacturer onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 8.4 A | ||
Maximum Drain Source Voltage 40 V | ||
Series PowerTrench | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 42 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 69 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 19 nC @ 5 V | ||
Length 6.73mm | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
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