IXYS Type N-Channel MOSFET, 28 A, 1 kV Enhancement, 4-Pin SOT-227
- RS stock no.:
- 804-7574
- Distrelec Article No.:
- 302-53-369
- Mfr. Part No.:
- IXFN32N100Q3
- Manufacturer:
- IXYS
Bulk discount available
Subtotal (1 unit)*
R 1 227,28
(exc. VAT)
R 1 411,37
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 9 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | R 1,227.28 |
| 2 - 4 | R 1,196.60 |
| 5 - 9 | R 1,160.70 |
| 10 - 29 | R 1,114.27 |
| 30 + | R 1,069.70 |
*price indicative
- RS stock no.:
- 804-7574
- Distrelec Article No.:
- 302-53-369
- Mfr. Part No.:
- IXFN32N100Q3
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 320mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 780W | |
| Maximum Operating Temperature | 150°C | |
| Length | 38.23mm | |
| Standards/Approvals | No | |
| Height | 9.6mm | |
| Width | 25.07 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253369 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 320mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 780W | ||
Maximum Operating Temperature 150°C | ||
Length 38.23mm | ||
Standards/Approvals No | ||
Height 9.6mm | ||
Width 25.07 mm | ||
Automotive Standard No | ||
Distrelec Product Id 30253369 | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
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- IXYS HiperFET 82 A 4-Pin SOT-227 IXFN100N50Q3
- IXYS HiperFET 24 A 3-Pin TO-264 IXFK24N100Q3
- IXYS HiperFET 32 A 3-Pin TO-264 IXFK32N100Q3
- IXYS HiperFET 15 A 3-Pin TO-247 IXFH15N100Q3
- IXYS HiperFET 18 A 3-Pin TO-247 IXFH18N100Q3