IXYS Type N-Channel MOSFET, 82 A, 500 V Enhancement, 4-Pin SOT-227 IXFN100N50Q3

Subtotal (1 tube of 10 units)*

R 8 288,11

(exc. VAT)

R 9 531,33

(inc. VAT)

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Units
Per unit
Per Tube*
10 +R 828.811R 8,288.11

*price indicative

RS stock no.:
168-4752
Mfr. Part No.:
IXFN100N50Q3
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

82A

Maximum Drain Source Voltage Vds

500V

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

49mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

960W

Typical Gate Charge Qg @ Vgs

255nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Width

25.07 mm

Height

9.6mm

Length

38.23mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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