onsemi NTF Type P-Channel MOSFET, 2.9 A, 30 V Enhancement, 4-Pin SOT-223 NTF5P03T3G
- RS stock no.:
- 802-1478
- Distrelec Article No.:
- 304-45-676
- Mfr. Part No.:
- NTF5P03T3G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 347,95
(exc. VAT)
R 400,15
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 6,450 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 13.918 | R 347.95 |
| 50 - 75 | R 13.57 | R 339.25 |
| 100 - 225 | R 13.163 | R 329.08 |
| 250 - 475 | R 12.637 | R 315.93 |
| 500 + | R 12.131 | R 303.28 |
*price indicative
- RS stock no.:
- 802-1478
- Distrelec Article No.:
- 304-45-676
- Mfr. Part No.:
- NTF5P03T3G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-223 | |
| Series | NTF | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.5V | |
| Maximum Power Dissipation Pd | 3.13W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Height | 1.65mm | |
| Automotive Standard | AEC | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-223 | ||
Series NTF | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.5V | ||
Maximum Power Dissipation Pd 3.13W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 150°C | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Height 1.65mm | ||
Automotive Standard AEC | ||
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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