DiodesZetex DMP3099L Type P-Channel MOSFET, 2.9 A, 30 V Enhancement, 3-Pin SOT-23 DMP3099L-7
- RS stock no.:
- 827-0503
- Mfr. Part No.:
- DMP3099L-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 100 units)*
R 104,60
(exc. VAT)
R 120,30
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 447,000 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | R 1.046 | R 104.60 |
| 500 - 900 | R 1.02 | R 102.00 |
| 1000 - 2400 | R 0.989 | R 98.90 |
| 2500 - 4900 | R 0.95 | R 95.00 |
| 5000 + | R 0.912 | R 91.20 |
*price indicative
- RS stock no.:
- 827-0503
- Mfr. Part No.:
- DMP3099L-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMP3099L | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.26V | |
| Maximum Power Dissipation Pd | 1.08W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMP3099L | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.26V | ||
Maximum Power Dissipation Pd 1.08W | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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