Nexperia Type N-Channel MOSFET, 100 A, 30 V Enhancement, 3-Pin TO-263 PSMN4R3-30BL,118
- RS stock no.:
- 798-2968
- Mfr. Part No.:
- PSMN4R3-30BL,118
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 137,03
(exc. VAT)
R 157,585
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 800 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 27.406 | R 137.03 |
| 50 - 195 | R 26.72 | R 133.60 |
| 200 - 495 | R 25.918 | R 129.59 |
| 500 - 795 | R 24.882 | R 124.41 |
| 800 + | R 23.886 | R 119.43 |
*price indicative
- RS stock no.:
- 798-2968
- Mfr. Part No.:
- PSMN4R3-30BL,118
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 103W | |
| Typical Gate Charge Qg @ Vgs | 41.5nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Standards/Approvals | No | |
| Width | 11 mm | |
| Length | 10.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 103W | ||
Typical Gate Charge Qg @ Vgs 41.5nC | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Standards/Approvals No | ||
Width 11 mm | ||
Length 10.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
Related links
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-263
- Nexperia Type N-Channel MOSFET 60 V Enhancement118
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220
- Nexperia Type N-Channel MOSFET 30 V Enhancement127
- Nexperia Type N-Channel MOSFET 60 V Enhancement118
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Nexperia Type N-Channel MOSFET 30 V Enhancement127
- Nexperia Type N-Channel MOSFET 30 V Enhancement127