Nexperia Type N-Channel MOSFET, 100 A, 30 V Enhancement, 3-Pin TO-220 PSMN2R7-30PL,127
- RS stock no.:
- 798-2930
- Mfr. Part No.:
- PSMN2R7-30PL,127
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
Subtotal (1 pack of 4 units)*
R 232,732
(exc. VAT)
R 267,64
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 92 unit(s) ready to ship from another location
- Plus 92 unit(s) shipping from 28 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 48 | R 58.183 | R 232.73 |
| 52 - 248 | R 56.728 | R 226.91 |
| 252 - 496 | R 55.025 | R 220.10 |
| 500 - 996 | R 52.825 | R 211.30 |
| 1000 + | R 50.713 | R 202.85 |
*price indicative
- RS stock no.:
- 798-2930
- Mfr. Part No.:
- PSMN2R7-30PL,127
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 170W | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 175°C | |
| Height | 16mm | |
| Length | 10.3mm | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 170W | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 175°C | ||
Height 16mm | ||
Length 10.3mm | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
Related links
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220
- Nexperia Type N-Channel MOSFET 30 V Enhancement127
- Nexperia Type N-Channel MOSFET 30 V Enhancement127
- Nexperia Type N-Channel MOSFET 80 V Enhancement127
- Nexperia Type N-Channel MOSFET 40 V Enhancement127
- Nexperia Type N-Channel MOSFET 40 V Enhancement127
- Nexperia Type N-Channel MOSFET 80 V Enhancement127
- Nexperia Type N-Channel MOSFET 100 V Enhancement127