STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-263 STB60NF06LT4
- RS stock no.:
- 795-6944
- Mfr. Part No.:
- STB60NF06LT4
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 204,51
(exc. VAT)
R 235,185
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 40.902 | R 204.51 |
| 50 - 495 | R 39.88 | R 199.40 |
| 500 - 745 | R 38.684 | R 193.42 |
| 750 - 995 | R 37.136 | R 185.68 |
| 1000 + | R 35.65 | R 178.25 |
*price indicative
- RS stock no.:
- 795-6944
- Mfr. Part No.:
- STB60NF06LT4
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STripFET II | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.6mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Width | 9.35 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STripFET II | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Operating Temperature 175°C | ||
Height 4.6mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Width 9.35 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
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- STMicroelectronics STripFET II Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 STD60NF06T4
- STMicroelectronics STripFET II Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263