STMicroelectronics STripFET II Type N-Channel MOSFET, 55 A, 60 V Enhancement, 3-Pin TO-263 STB55NF06LT4
- RS stock no.:
- 761-0405
- Mfr. Part No.:
- STB55NF06LT4
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 175,22
(exc. VAT)
R 201,505
(inc. VAT)
FREE delivery for orders over R 1,500.00
Stocked by manufacturer
- Ready to ship from 03 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 35.044 | R 175.22 |
| 50 - 245 | R 34.168 | R 170.84 |
| 250 - 495 | R 33.142 | R 165.71 |
| 500 - 995 | R 31.816 | R 159.08 |
| 1000 + | R 30.544 | R 152.72 |
*price indicative
- RS stock no.:
- 761-0405
- Mfr. Part No.:
- STB55NF06LT4
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | STripFET II | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 95W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.75mm | |
| Width | 10.4 mm | |
| Height | 4.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series STripFET II | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 95W | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.75mm | ||
Width 10.4 mm | ||
Height 4.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics STripFET II Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- STMicroelectronics STripFET II Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- STMicroelectronics STripFET II Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 STP55NF06L
- STMicroelectronics STripFET II Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- STMicroelectronics STripFET II Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- STMicroelectronics STripFET II Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 STB60NF06LT4
- STMicroelectronics STripFET II Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 STB55NF06T4
- STMicroelectronics STripFET II Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263