onsemi MGSF2 Type N-Channel MOSFET, 2.8 A, 20 V Enhancement, 3-Pin SOT-23 MGSF2N02ELT1G
- RS stock no.:
- 792-5675
- Mfr. Part No.:
- MGSF2N02ELT1G
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 20 units)*
R 88,90
(exc. VAT)
R 102,24
(inc. VAT)
Add 360 units to get free delivery
In Stock
- 1,720 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 4.445 | R 88.90 |
| 100 - 180 | R 4.334 | R 86.68 |
| 200 - 980 | R 4.204 | R 84.08 |
| 1000 - 1980 | R 4.036 | R 80.72 |
| 2000 + | R 3.874 | R 77.48 |
*price indicative
- RS stock no.:
- 792-5675
- Mfr. Part No.:
- MGSF2N02ELT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | MGSF2 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 115mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Height | 1.01mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series MGSF2 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 115mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.25W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Height 1.01mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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