ROHM R60 Type N-Channel MOSFET, 600 V Enhancement, 3-Pin SOT-223-3 R6006KND4TL1
- RS stock no.:
- 264-854
- Mfr. Part No.:
- R6006KND4TL1
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 tape of 10 units)*
R 101,67
(exc. VAT)
R 116,92
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 100 unit(s) shipping from 17 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | R 10.167 | R 101.67 |
| 100 - 240 | R 9.913 | R 99.13 |
| 250 - 490 | R 9.616 | R 96.16 |
| 500 - 990 | R 9.231 | R 92.31 |
| 1000 + | R 8.862 | R 88.62 |
*price indicative
- RS stock no.:
- 264-854
- Mfr. Part No.:
- R6006KND4TL1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | R60 | |
| Package Type | SOT-223-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 870mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 12.3W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 600V | ||
Series R60 | ||
Package Type SOT-223-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 870mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 12.3W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM 600V 2.8A SOT-223-3 High-speed switching Power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Low on-resistance
Ultra fast switching speed
Parallel use is easy
Pb-free plating and RoHS compliant
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