DiodesZetex Single 1 Type N-Channel MOSFET, 8.7 A, 30 V Enhancement, 8-Pin SOIC DMN3018SSD-13
- RS stock no.:
- 790-4592
- Mfr. Part No.:
- DMN3018SSD-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 175,975
(exc. VAT)
R 202,375
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | R 7.039 | R 175.98 |
| 250 - 600 | R 6.863 | R 171.58 |
| 625 - 1225 | R 6.657 | R 166.43 |
| 1250 - 2475 | R 6.39 | R 159.75 |
| 2500 + | R 6.135 | R 153.38 |
*price indicative
- RS stock no.:
- 790-4592
- Mfr. Part No.:
- DMN3018SSD-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | -55°C | |
| Width | 3.95 mm | |
| Height | 1.5mm | |
| Standards/Approvals | AEC-Q101, MIL-STD-202, UL 94V-0, RoHS, J-STD-020 | |
| Length | 4.95mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.5W | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Transistor Configuration Single | ||
Maximum Operating Temperature -55°C | ||
Width 3.95 mm | ||
Height 1.5mm | ||
Standards/Approvals AEC-Q101, MIL-STD-202, UL 94V-0, RoHS, J-STD-020 | ||
Length 4.95mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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