DiodesZetex Single 1 Type P-Channel Power MOSFET, 6.5 A, 20 V Enhancement, 8-Pin SO-8 DMP2040USD-13
- RS stock no.:
- 182-7019
- Mfr. Part No.:
- DMP2040USD-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 357,00
(exc. VAT)
R 410,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 10 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | R 7.14 | R 357.00 |
| 250 - 450 | R 6.962 | R 348.10 |
| 500 - 950 | R 6.753 | R 337.65 |
| 1000 - 1950 | R 6.483 | R 324.15 |
| 2000 + | R 6.223 | R 311.15 |
*price indicative
- RS stock no.:
- 182-7019
- Mfr. Part No.:
- DMP2040USD-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 8.6nC | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | -7V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | -55°C | |
| Length | 4.95mm | |
| Standards/Approvals | J-STD-020, AEC-Q101, RoHS, UL 94V-0, MIL-STD-202 | |
| Width | 3.9 mm | |
| Height | 1.5mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 8.6nC | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf -7V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature -55°C | ||
Length 4.95mm | ||
Standards/Approvals J-STD-020, AEC-Q101, RoHS, UL 94V-0, MIL-STD-202 | ||
Width 3.9 mm | ||
Height 1.5mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Dual P-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Backlighting
Power Management Functions
DC-DC Converters
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