Vishay SQ Rugged Type N-Channel MOSFET, 32 A, 40 V Enhancement, 5-Pin SO-8 SQJ412EP-T1_GE3
- RS stock no.:
- 787-9496
- Mfr. Part No.:
- SQJ412EP-T1_GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 258,24
(exc. VAT)
R 296,975
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 25 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 51.648 | R 258.24 |
| 50 - 245 | R 50.356 | R 251.78 |
| 250 - 995 | R 48.846 | R 244.23 |
| 1000 - 2495 | R 46.892 | R 234.46 |
| 2500 + | R 45.016 | R 225.08 |
*price indicative
- RS stock no.:
- 787-9496
- Mfr. Part No.:
- SQJ412EP-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.14mm | |
| Width | 5.03 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.14mm | ||
Width 5.03 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Related links
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- Vishay SQ Rugged N-Channel MOSFET 60 V, 8-Pin SOIC SQ4850EY-T1_GE3
- Vishay SQ Rugged N-Channel MOSFET 60 V, 3-Pin DPAK SQD40N06-14L-GE3
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- Vishay SQ Rugged N-Channel MOSFET 50 V, 3-Pin DPAK SQD50N05-11L_GE3
- Vishay SQ Rugged N-Channel MOSFET 60 V, 8-Pin SOIC SQ4850EY-T1-GE3
