Vishay SQ Rugged N-Channel MOSFET, 32 A, 40 V Enhancement, 5-Pin SO-8 SQJ412EP-T1_GE3

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Subtotal (1 pack of 5 units)*

R 282,26

(exc. VAT)

R 324,60

(inc. VAT)

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  • Shipping from 10 February 2027
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Units
Per unit
Per Pack*
5 - 45R 56.452R 282.26
50 - 245R 55.04R 275.20
250 - 995R 53.388R 266.94
1000 - 2495R 51.252R 256.26
2500 +R 49.202R 246.01

*price indicative

Packaging Options:
RS stock no.:
787-9496
Mfr. Part No.:
SQJ412EP-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

32A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

SQ Rugged

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

83W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

0.8V

Maximum Operating Temperature

175°C

Length

5mm

Height

1.14mm

Standards/Approvals

No

Width

5.03mm

Automotive Standard

AEC-Q101

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor


The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs


• AEC-Q101 qualified

• Junction temperature up to +175°C

• Low on-resistance n- and p-channel TrenchFET® technologies

• Innovative space-saving package options

MOSFET Transistors, Vishay Semiconductor


Approvals

AEC-Q101

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