Vishay SQ Rugged Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin SOIC SQ4850EY-T1_GE3
- RS stock no.:
- 819-3923
- Mfr. Part No.:
- SQ4850EY-T1_GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 20 units)*
R 425,26
(exc. VAT)
R 489,04
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 2,380 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 21.263 | R 425.26 |
| 100 - 480 | R 20.731 | R 414.62 |
| 500 - 1480 | R 20.109 | R 402.18 |
| 1500 - 2480 | R 19.305 | R 386.10 |
| 2500 + | R 18.533 | R 370.66 |
*price indicative
- RS stock no.:
- 819-3923
- Mfr. Part No.:
- SQ4850EY-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQ Rugged | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 47mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 6.8W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.55mm | |
| Length | 5mm | |
| Width | 4 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQ Rugged | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 47mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 6.8W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.55mm | ||
Length 5mm | ||
Width 4 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Related links
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- Vishay SQ Rugged Type N-Channel MOSFET 20 V Enhancement, 6-Pin TSOP
- Vishay SQ Rugged Type N-Channel MOSFET 40 V Enhancement, 5-Pin SO-8 SQJ412EP-T1_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 20 V Enhancement, 6-Pin TSOP SQ3460EV-T1_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
