Vishay SQ Rugged Type P-Channel MOSFET, 7.4 A, 40 V Enhancement, 6-Pin TSOP-6 SQ3419EV-T1_GE3
- RS stock no.:
- 787-9452
- Mfr. Part No.:
- SQ3419EV-T1_GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 125,59
(exc. VAT)
R 144,43
(inc. VAT)
FREE delivery for orders over R 1,500.00
Being discontinued
- Final 1,940 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 12.559 | R 125.59 |
| 50 - 240 | R 12.245 | R 122.45 |
| 250 - 990 | R 11.878 | R 118.78 |
| 1000 - 2990 | R 11.403 | R 114.03 |
| 3000 + | R 10.947 | R 109.47 |
*price indicative
- RS stock no.:
- 787-9452
- Mfr. Part No.:
- SQ3419EV-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.4A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TSOP-6 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 78mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.7mm | |
| Standards/Approvals | No | |
| Length | 3.1mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.4A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TSOP-6 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 78mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Gate Source Voltage Vgs 12V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 1.7mm | ||
Standards/Approvals No | ||
Length 3.1mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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