Vishay TrenchFET Type N-Channel MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

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Subtotal (1 pack of 10 units)*

R 161,53

(exc. VAT)

R 185,76

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 16.153R 161.53
50 - 240R 15.749R 157.49
250 - 990R 15.277R 152.77
1000 - 2990R 14.666R 146.66
3000 +R 14.079R 140.79

*price indicative

Packaging Options:
RS stock no.:
787-9409
Mfr. Part No.:
SISA10DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.8V

Maximum Power Dissipation Pd

39W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

34nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.4mm

Width

3.4 mm

Height

1.12mm

Automotive Standard

No

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