Vishay TrenchFET Type N-Channel MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Image representative of range

Bulk discount available
View bulk pricing options

Subtotal (1 pack of 10 units)*

R 171,65

(exc. VAT)

R 197,40

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 19 July 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
10 - 40R 17.165R 171.65
50 - 240R 16.736R 167.36
250 - 990R 16.234R 162.34
1000 - 2990R 15.585R 155.85
3000 +R 14.962R 149.62

*price indicative

Packaging Options:
RS stock no.:
787-9409
Mfr. Part No.:
SISA10DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

34nC

Forward Voltage Vf

0.8V

Maximum Power Dissipation Pd

39W

Maximum Operating Temperature

150°C

Length

3.4mm

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy