Vishay TrenchFET N-Channel MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3
- RS stock no.:
- 787-9409
- Mfr. Part No.:
- SISA10DN-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 193,55
(exc. VAT)
R 222,58
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 13 October 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 19.355 | R 193.55 |
| 50 - 240 | R 18.871 | R 188.71 |
| 250 - 990 | R 18.305 | R 183.05 |
| 1000 - 2990 | R 17.573 | R 175.73 |
| 3000 + | R 16.87 | R 168.70 |
*price indicative
- RS stock no.:
- 787-9409
- Mfr. Part No.:
- SISA10DN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.4mm | |
| Height | 1.12mm | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Width 3.4mm | ||
Height 1.12mm | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
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