Vishay TrenchFET Type N-Channel MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

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Subtotal (1 pack of 10 units)*

R 166,64

(exc. VAT)

R 191,64

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 16.664R 166.64
50 - 240R 16.247R 162.47
250 - 990R 15.76R 157.60
1000 - 2990R 15.13R 151.30
3000 +R 14.525R 145.25

*price indicative

Packaging Options:
RS stock no.:
787-9409
Mfr. Part No.:
SISA10DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

39W

Typical Gate Charge Qg @ Vgs

34nC

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Length

3.4mm

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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