Vishay TrenchFET Type N-Channel MOSFET, 185.6 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS54DN-T1-GE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 172,89

(exc. VAT)

R 198,825

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 5,975 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 45R 34.578R 172.89
50 - 95R 33.714R 168.57
100 - 245R 32.702R 163.51
250 - 995R 31.394R 156.97
1000 +R 30.138R 150.69

*price indicative

Packaging Options:
RS stock no.:
228-2933
Mfr. Part No.:
SiSS54DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

185.6A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.06mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

47.5nC

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 30-V (D-S) MOSFET.

100 % Rg and UIS tested

Related links