Vishay Si7456DDP N-Channel MOSFET, 27.8 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SI7456DDP-T1-GE3
- RS stock no.:
- 787-9244
- Mfr. Part No.:
- SI7456DDP-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 280,70
(exc. VAT)
R 322,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 850 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 56.14 | R 280.70 |
| 50 - 245 | R 54.736 | R 273.68 |
| 250 - 995 | R 53.094 | R 265.47 |
| 1000 - 2995 | R 50.97 | R 254.85 |
| 3000 + | R 48.932 | R 244.66 |
*price indicative
- RS stock no.:
- 787-9244
- Mfr. Part No.:
- SI7456DDP-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | Si7456DDP | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.031Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 35.7W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.7nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Standards/Approvals | Lead (Pb)-Free | |
| Height | 1.12mm | |
| Width | 5.26mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series Si7456DDP | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.031Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 35.7W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.7nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Standards/Approvals Lead (Pb)-Free | ||
Height 1.12mm | ||
Width 5.26mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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